pnp bcy78 ? BCY79 comset semiconductors 1/4 s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s the bcy78 and BCY79 are pnp transistors mounted in to-18 metal package with the collector connected to the case . they are designed for use in audio drive and low-noise input stages. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b =0) BCY79 -45 v bcy78 -32 v ces collector-emitter voltage (v be =0) BCY79 -45 v bcy78 -32 v ebo emitter-base voltage (i c =0) BCY79 -5 v bcy78 -5 i c collector current BCY79 -200 ma bcy78 i b base current BCY79 -20 ma bcy78 p d total power dissipation @ t amb = 25 BCY79 390 mw bcy78 p d total power dissipation @ t case = 45 BCY79 1 w bcy78 t j junction temperature BCY79 200 c bcy78 t stg storage temperature range BCY79 -65 to +150 c bcy78 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to mounting base 450 c/w r thj-c thermal resistance, junction to ambient in free air 150 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp bcy78 ? BCY79 18/10/2012 comset semiconductors 2/4 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i ces collector cutoff current v cb =-35 v, v be =0v BCY79 - - -20 na v cb =-25 v, v b =0v bcy78 i ces collector cutoff current v cb =-35 v v be =0v,t j =150c BCY79 - - -10 a v cb =-25 v v be =0v,t j =150c bcy78 i ebo emitter cutoff current v be =-4.0 v, i c =0 BCY79 - - -20 na bcy78 v ceo collector emitter breakdown voltage i c =-2 ma, i b =0 BCY79 -45 - - v bcy78 -32 - - v ebo emitter base breakdown voltage i e =-1a, i c =0 BCY79 -5 - - v bcy78 v ce(sat) collector-emitter saturation voltage i c =-10 ma i b =-0.25 ma BCY79 - -0.12 -0.25 v bcy78 i c =-100 ma i b =-2.5 ma BCY79 - -04 -08 bcy78 v be(sat) base-emitter saturation voltage i c =-10 ma i b =-0.25 ma BCY79 -0.6 -0.7 -0.85 bcy78 i c =-100 ma i b =-2.5 ma BCY79 -0.7 -0.85 -1.2 bcy78 v be base-emitter voltage i c =-10 a v ce =-5 v BCY79 - -0.55 - v bcy78 i c =-2 ma v ce =-5 v BCY79 -0.6 -0.65 -0.75 bcy78 i c =-10 ma v ce =-1 v BCY79 - -0.68 - bcy78 i c =-100 ma v ce =-1 v BCY79 - -0.75 - bcy78 symbol ratings test condition(s) BCY79vii BCY79viii BCY79ix BCY79x bcy78vii bcy78viii bcy78ix bcy78x h fe dc current gain i c =-10 a, v ce =-5 v - >30 >40 >100 typ.140 typ.200 typ.270 typ.390 i c =-2 ma, v ce =-5 v >120 >180 >250 >380 <220 <310 <460 <630 i c =-10 ma, v ce =-1 v >80 >120 >160 >240 - <400 <630 <1000 i c =-100 ma, v ce =-1 v >40 >45 >60 >60 h fe small-signal current gain i c =2 ma, v c e =5 v f = 1khz >125 >175 >250 >350 <250 <350 <500 <700 www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp bcy78 ? BCY79 18/10/2012 comset semiconductors 3/4 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit f t transition frequency i c =-10 ma, v ce =-5 v f = 100mhz BCY79 - 180 - mhz bcy78 f noise figure , rs=2k ? i c =-200 a, v ce =-5 v f = 1khz, b =200hz BCY79 - 2 6 db bcy78 t d delay time i con =-10 ma i bon = -i boff = -1ma v bb =3.6 v r1= r2 = 5k ? r l = 990 ? BCY79 - 35 - ns bcy78 t r rise time BCY79 - 50 - bcy78 t on turn on time BCY79 - 85 150 bcy78 t s storage time BCY79 - 400 - bcy78 t f fall time BCY79 - 80 - bcy78 t off turn off time BCY79 - 480 800 bcy78 t d delay time i con =-100 ma i bon = -i boff = -10ma v bb =5 v r1= 500 ? r2 = 700 ? r l = 98 ? BCY79 - 5 - ns bcy78 t r rise time BCY79 - 50 - bcy78 t on turn on time BCY79 - 55 150 bcy78 t s storage time BCY79 - 250 - bcy78 t f fall time BCY79 - 200 - bcy78 t off turn off time BCY79 - 450 800 bcy78 c c collector capacitance i e = i e = 0 ,v cb =-10 v f = 1mhz BCY79 - - 5 pf bcy78 c e emitter capacitance i c = i c = 0 ,v eb =-0.5 v f = 1mhz BCY79 - - 15 pf bcy78 www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp bcy78 ? BCY79 18/10/2012 comset semiconductors 4/4 echanical data case to-18 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assume any liability ar ising out of the application or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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